inchange semiconductor isc product specification isc silicon npn power transistor BUS48P description high voltage capability high current capability fast switching speed applications designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. they are partic- ulary suited for line-operated swtchmo de applications such as: switching regulators inverters solenoid and relay drivers motor controls deflection circuits absolute maximum ratings(ta=25 ) symbol parameter value unit v cev collector-emitter voltage 850 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b b base current-continuous 5 a i bm base current-peak 20 a p c collector power dissipation @t c =25 150 w t j junction temperature 175 t stg storage temperature range -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUS48P electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0; l= 25mh 400 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 10a; i b = 2a i c = 10a; i b = 2a;t c = 100 1.5 2.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 15a ;i b = 3a 5.0 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 2a i c = 10a; i b = 2a;t c = 100 1.6 1.6 v i cer collector cutoff current v ce =rated v cer ; r be = 10 v ce =rated v cer ; r be = 10 ;t c =125 0.5 3.0 ma i cev collector cutoff current v ce =rated v ces ; v be( off ) = 1.5v v ce =rated v ces ; v be( off ) = 1.5v;t c =125 0.2 2.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma h fe dc current gain i c = 10a; v ce = 5v 8 c ob output capacitance i e = 0; v cb = 10v, f test = 1mhz 350 pf switching times resistive load t d delay time 0.2 s t r rise time 0.7 s t s storage time 2.0 s t f fall time i c = 10a; i b1 = 2a; v cc = 250v; v be( off ) = 5v, duty cycle 2% 0.4 s isc website www.iscsemi.cn
|
